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NST45011MW6T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Dual Matched General Purpose Transistor NPN Matched Pair
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NST45011MW6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (IC = 10 mA)
Collector −Emitter Breakdown Voltage, (IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage, (IC = 10 mA)
Emitter −Base Breakdown Voltage, (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
Collector Cutoff Current (VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
V(BR)CEO
45
−
−
V
V(BR)CES
50
−
−
V
V(BR)CBO
50
−
−
V
V(BR)EBO
6.0
−
−
V
ICBO
−
−
15
nA
−
−
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V) (Note 2)
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
hFE
−
150
−
−
200
300
500
hFE(1)/hFE(2)
0.9
1.0
−
VCE(sat)
mV
−
−
250
−
−
600
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
mV
700
750
800
850
890
950
Base −Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V) (Note 3)
SMALL−SIGNAL CHARACTERISTICS
VBE(on)
mV
580
660
700
−
−
770
VBE(1) − VBE(2)
−
1.0
2.0
Current −Gain − Bandwidth Product, (IC = 10 mA, VCE = 5 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance, (VCB = 10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure, (IC = 0.2 mA, VCE = 5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz)
NF
−
−
10
dB
2. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator.
3. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package.
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