NST3946DXV6T1 Datasheet, PDF (3/12 Pages) ON Semiconductor – Dual General Purpose Transistor

NST3946DXV6T1, NST3946DXV6T5
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz)
(I_C = -10 mAdc, V_CE = -20 Vdc, f = 100 MHz)
(NPN)
(PNP)
Output Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
(V_CB = -5.0 Vdc, I_E = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
(V_EB = -0.5 Vdc, I_C = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Impedance
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = -10 Vdc, I_C = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Voltage Feedback Ratio
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = -10 Vdc, I_C = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Small - Signal Current Gain
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = -10 Vdc, I_C = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Output Admittance
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = -10 Vdc, I_C = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Noise Figure
(V_CE = 5.0 Vdc, I_C = 100 mAdc, R_S = 1.0 k Ω, f = 1.0 kHz)
(V_CE = -5.0 Vdc, I_C = -100 mAdc, R_S = 1.0 k Ω, f = 1.0 kHz)
(NPN)
(PNP)
SWITCHING CHARACTERISTICS
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
NF
MHz
300
-
250
-
pF
-
4.0
-
4.5
pF
-
8.0
-
10.0
kΩ
1.0
10
2.0
12
X 10^{- 4}
0.5
8.0
0.1
10
-
100
400
100
400
mmhos
1.0
40
3.0
60
dB
-
5.0
-
4.0
Delay Time
Rise Time
Storage Time
Fall Time
(V_CC = 3.0 Vdc, V_BE = - 0.5 Vdc)
(V_CC = -3.0 Vdc, V_BE = 0.5 Vdc)
(I_C = 10 mAdc, I_B1 = 1.0 mAdc)
(I_C = -10 mAdc, I_B1 = -1.0 mAdc)
(V_CC = 3.0 Vdc, I_C = 10 mAdc)
(V_CC = -3.0 Vdc, I_C = -10 mAdc)
(I_B1 = I_B2 = 1.0 mAdc)
(I_B1 = I_B2 = -1.0 mAdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
t_d
-
35
-
35
ns
t_r
-
35
-
35
t_s
-
200
-
225
ns
t_f
-
50
-
75
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