English
Language : 

NST3946DXV6T1 Datasheet, PDF (2/12 Pages) ON Semiconductor – Dual General Purpose Transistor
◁
NST3946DXV6T1, NST3946DXV6T5
Characteristic
(Both Junctions Heated)
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
Symbol
Max
Unit
RqJA
TJ, Tstg
250
(Note 1)
- 55 to
+150
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = -1.0 mAdc, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = -10 mAdc, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = -10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = -30 Vdc, VEB = -3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = -30 Vdc, VEB = -3.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(NPN)
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(IC = -10 mAdc, VCE = -1.0 Vdc)
(IC = -50 mAdc, VCE = -1.0 Vdc)
(IC = -100 mAdc, VCE = -1.0 Vdc)
Collector - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Base - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.
(PNP)
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
40
-
-40
-
V(BR)CBO
Vdc
60
-
-40
-
V(BR)EBO
Vdc
6.0
-
-5.0
-
IBL
nAdc
-
50
-
-50
ICEX
nAdc
-
50
-
-50
hFE
-
40
-
70
-
100
300
60
-
30
-
60
-
80
-
100
300
60
-
30
-
VCE(sat)
-
-
Vdc
0.2
0.3
-
-0.25
-
-0.4
VBE(sat)
Vdc
0.65
0.85
-
0.95
-0.65
-
-0.85
-0.95
http://onsemi.com
2
 ▷