NST3904DXV6T1_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual General Purpose Transistor

NST3904DXV6T1, NST3904DXV6T5
TYPICAL TRANSIENT CHARACTERISTICS
T_J = 25°C
T_J = 125°C
10
7.0
5.0
C_ibo
3.0
2.0
C_obo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
500
300
I_C/I_B = 10
200
100
70
50
30
20
10
7
5
1.0
t_r @ V_CC = 3.0 V
40 V
15 V
t_d @ V_OB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 4. Turnā-āOn Time
500
300
V_CC = 40 V
200
I_C/I_B = 10
100
70
50
30
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 5. Rise Time
500
300
200 ^{IC/IB = 20}
I_C/I_B = 10
t′_s = t_s - ¹/₈ t_f
I_B1 = I_B2
100
70
50
I_C/I_B = 20
30
I_C/I_B = 10
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
500
300
V_CC = 40 V
200
I_B1 = I_B2
I_C/I_B = 20
100
70
50
30
I_C/I_B = 10
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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