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| NST3904DXV6T1_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual General Purpose Transistor | |||
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NST3904DXV6T1, NST3904DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorÄ-ÄEmitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
CollectorÄ-ÄBase Breakdown Voltage (IC = 10 mAdc, IE = 0)
EmitterÄ-ÄBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
CollectorÄ-ÄEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
BaseÄ-ÄEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL-ÄSIGNAL CHARACTERISTICS
CurrentÄ-ÄGain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
SmallÄ-ÄSignal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = -Ä0.5 Vdc)
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
2. Pulse Test: Pulse Width ⤠300 ms; Duty Cycle â¤ÄÄ2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
IBL
-
50
nAdc
ICEX
-
50
nAdc
hFE
VCE(sat)
VBE(sat)
-
40
-
70
-
100
300
60
-
30
-
Vdc
-
0.2
-
0.3
Vdc
0.65 0.85
-
0.95
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
-
MHz
-
4.0
pF
-
8.0
pF
1.0
10
kW
2.0
12
0.5
8.0 X 10-Ä4
0.1
10
100
400
-
100
400
1.0
40 mmhos
3.0
60
-
5.0
dB
-
4.0
td
-
35
ns
tr
-
35
ts
-
200
ns
tf
-
50
DUTY CYCLE = 2%
300 ns
+10.9 V
10 k
+3 V
275
10 < t1 < 500 ms t1
DUTY CYCLE = 2%
+10.9 V
10 k
0
+3 V
275
-Ä0.5 V
< 1 ns
Cs < 4 pF*
-Ä9.1 Vâ²
1N916
< 1 ns
Cs < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
http://onsemi.com
2
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