NSS60201LT1G_16 Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Transistor

NSS60201LT1G
0.35
I_C/I_B = 10
0.30
0.25
150°C
0.20
0.15
25°C
0.10
−55°C
0.05
0
0.001
0.01
0.10
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector−Emitter Saturation Voltage
325
300
275
150°C (5.0 V)
250
150°C (2.0 V)
225
25°C (5.0 V)
200
175
25°C (2.0 V)
150
125
−55°C (5.0 V)
100
−55°C (2.0 V)
75
50
25
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current versus Collector Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
1.0
0.8
0.6
0.4
0.2
0
0
−55°C
25°C
150°C
0
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 3. V_BE(sat)
I_C = 10 mA
100 mA
500 mA
300 mA
0.0001
0.001
0.01
0.1
I_B, BASE CURRENT (A)
Figure 5. Saturation Region
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
400
375
350
325
300
275
250
225
200
175
0
−55°C
25°C
150°C
0.01
0.10
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. V_BE(on)
T_J = 25°C
1
2
3
4
5
6
V_EB, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
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