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NSS60201LT1G_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Transistor
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NSS60201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
−
Vdc
−
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
140
−
Vdc
−
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
8.0
−
Vdc
−
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
mAdc
−
0.1
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
−
mAdc
−
0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 10 mA)
hFE
160
−
−
160
−
−
150
−
350
100
−
−
VCE(sat)
−
−
−
V
−
0.020
−
0.075
−
0.140
VBE(sat)
−
V
0.790
0.900
Base −Emitter Turn−on Voltage (Note 4)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
V
0.760
0.900
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
100
−
MHz
−
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
−
Cobo
−
−
380
pF
−
45
pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
55
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
1100
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
120
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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