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NSS40600CF8T1G_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – 40 V, 7.0 A, Low VCE(sat) PNP Transistor
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NSS40600CF8T1G, SNSS40600CF8T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Collector Cutoff Current
(VCB = −6.5 Vdc, VBE(off) = 0 Vdc)
ICEO
ON CHARACTERISTICS
DC Current Gain (Note 4)
hFE
(IC = −10 mA, IC = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.020 A)
(IC = −3.0 A, IB = −0.030 A)
(IC = −4.0 A, IB = −0.400 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
fT
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
Cobo
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
Min
−40
−40
−7.0
−
−
−
250
250
220
180
150
−
−
−
−
−
−
−
−
100
−
−
−
−
−
−
Typical
Max
−
−
−
−
−
−
−
−0.1
−
−0.1
−
−10
−
−
300
−
−
0.007
0.045
0.080
0.150
0.180
0.160
−
−
−
−
−
−
−
−
−
−
−0.010
−0.075
−0.110
−0.200
−0.250
−0.220
−0.90
−0.90
−
650
150
−
120
−
220
−
650
−
240
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
V
V
V
MHz
pF
pF
ns
ns
ns
ns
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