NSS40600CF8T1G_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – 40 V, 7.0 A, Low VCE(sat) PNP Transistor

NSS40600CF8T1G, SNSS40600CF8T1G
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
−40
Vdc
−40
Vdc
−7.0
Vdc
−6.0
Adc
−7.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 1)
830
6.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
150
°C/W
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 2)
1.4
11.1
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
90
°C/W
Thermal Resistance,
Junction−to−Lead #1
R_qJL (Note 2)
15
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P_Dsingle
W
(Notes 2 & 3)
2.75
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm², 1 oz copper traces.
2. FR−4 @ 500 mm², 1 oz copper traces.
3. Thermal response.
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