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NSS20300MR6T1G_07 Datasheet, PDF (3/5 Pages) ON Semiconductor – 20 V, 5 A, Low VCE(sat) PNP Transistor
0.2
IC/IB = 10
0.15
0.1
0.05
NSS20300MR6T1G
150°C
0.25
IC/IB = 100
0.2
0.15
−55°C
0.1
0.05
−55°C
150°C
25°C
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
575
525
150°C (5.0 V)
475
425
150°C (2.0 V)
375
325
25°C (5.0 V)
275
225
25°C (2.0 V)
175
−55°C (5.0 V)
125
−55°C (2.0 V)
75
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus Collector
Current
1.2
1.1 IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.00
0.90 IC/IB = 100
0.80
−55°C
0.70
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage
versus Collector Current
1.1
1.0 VCE = −1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Turn−On Voltage versus
Collector Current
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