NSS20300MR6T1G_07 Datasheet, PDF (2/5 Pages) ON Semiconductor – 20 V, 5 A, Low VCE(sat) PNP Transistor

NSS20300MR6T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
V_(BR)CEO
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
V_(BR)CBO
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
V_(BR)EBO
Collector Cutoff Current
(V_CB = −20 Vdc, I_E = 0)
I_CBO
Collector−Emitter Cutoff Current
(V_CES = −20 Vdc)
I_CES
Emitter Cutoff Current
(V_EB = −6.0 Vdc)
I_EBO
ON CHARACTERISTICS
DC Current Gain ⁽¹⁾
(I_C = −1.0 A, V_CE = −1.5 V)
(I_C = −1.5 A, V_CE = −2.0 V)
(I_C = −2.0 A, V_CE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(I_C = −0.10 A, I_B = −0.010 A)
(I_C = −1.0 A, I_B = −0.010 A)
(I_C = −2.0 A, I_B = −0.02 A)
Base −Emitter Saturation Voltage (Note 3)
(I_C = −1A, I_B = −0.010 A)
h_FE
V_CE(sat)
V_BE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(I_C = −2.0 A, V_CE = −3.0 V)
V_BE(on)
Cutoff Frequency
f_T
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
Input Capacitance (V_EB = −0.5 V, f = 1.0 MHz)
Output Capacitance (V_CB = −3.0 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
C_IBO
C_OBO
Min
−20
−30
−6.0
−
−
−
100
100
100
−
−
−
−
−
100
−
−
Typical
Max
Unit
Vdc
−
Vdc
−
Vdc
−
mAdc
−0.1
mAdc
−0.1
mAdc
−0.1
230
−0.010
−0.127
−0.250
−
−
−
−
400
−
−0.015
−0.145
−0.320
−0.85
−0.875
−
650
100
V
V
V
MHz
pF
pF
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