NSS20300MR6T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP Transistor

NSS20300MR6T1G
PACKAGE DIMENSIONS
A
L
65 4
S
B
12 3
D
G
0.05 (0.002)
C
H
TSOP−6
CASE 318G−02
ISSUE N
M
J
K
SOLDERING FOOTPRINT*
2.4
0.094
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 2.90 3.10 0.1142 0.1220
B 1.30 1.70 0.0512 0.0669
C 0.90 1.10 0.0354 0.0433
D 0.25 0.50 0.0098 0.0197
G 0.85 1.05 0.0335 0.0413
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.55 0.0493 0.0610
M
0 _{_} 10 _{_} 0 _{_} 10 _{_}
S 2.50 3.00 0.0985 0.1181
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ Ǔ _{SCALE 10:1}
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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