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NSS20300MR6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP Transistor | |||
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NSS20300MR6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = â10 mAdc, IB = 0)
V(BR)CEO
Collector âBase Breakdown Voltage
(IC = â0.1 mAdc, IE = 0)
V(BR)CBO
Emitter âBase Breakdown Voltage
(IE = â0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = â20 Vdc, IE = 0)
ICBO
CollectorâEmitter Cutoff Current
(VCES = â20 Vdc)
ICES
Emitter Cutoff Current
(VEB = â6.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (1)
(IC = â1.0 A, VCE = â1.5 V)
(IC = â1.5 A, VCE = â2.0 V)
(IC = â2.0 A, VCE = â2.0 V)
Collector âEmitter Saturation Voltage (Note 3)
(IC = â0.10 A, IB = â0.010 A)
(IC = â1.0 A, IB = â0.010 A)
(IC = â2.0 A, IB = â0.02 A)
Base âEmitter Saturation Voltage (Note 3)
(IC = â1A, IB = â0.010 A)
hFE
VCE(sat)
VBE(sat)
Base âEmitter Turnâon Voltage (Note 3)
(IC = â2.0 A, VCE = â3.0 V)
VBE(on)
Cutoff Frequency
fT
(IC = â100 mA, VCE = â5.0 V, f = 100 MHz)
Input Capacitance (VEB = â0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = â3.0 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width ⤠300 msec, Duty Cycle ⤠2%
Cibo
Cobo
Min
â20
â30
â6.0
â
â
â
100
100
100
â
â
â
â
â
100
â
â
Typical
Max
Unit
Vdc
â
Vdc
â
Vdc
â
mAdc
â0.1
mAdc
â0.1
mAdc
â0.1
â
400
â
V
â
â0.015
â
â0.145
â
â0.320
V
â
â0.85
V
â
â0.875
MHz
â
â
650
pF
100
pF
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