NSS1C201L_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – 100 V, 3.0 A, Low VCE(sat) Transistor

NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
0
0.001
150°C
25°C
−55°C
V_CE = 2 V
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
I_C/I_B = 10
0.1
150°C
25°C
−55°C
400
350
300
250
200
150
100
50
0
0.001
150°C
V_CE = 4 V
25°C
−55°C
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1
I_C/I_B = 20
0.1
150°C
25°C
−55°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.2
I_C/I_B = 10
1.0
0.8
0.6
0.4
−55°C
25°C
150°C
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
1.2
I_C/I_B = 50
1.0
0.8
−55°C
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
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