 English |
|
|
|
|
|
|
|
| NSS1C201L_14 Datasheet, PDF (2/6 Pages) ON Semiconductor – 100 V, 3.0 A, Low VCE(sat) Transistor | |||
| |||
| ◁ |
NSS1C201L, NSV1C201L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector âBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter âBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
V(BR)CEO
100
V(BR)CBO
140
V(BR)EBO
7.0
ICBO
IEBO
Vdc
Vdc
Vdc
nAdc
100
nAdc
50
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
150
120
240
360
80
40
Collector âEmitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 0.5 A, IB = 0.05 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
V
0.030
0.060
0.090
0.150
Base âEmitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
V
0.950
Base âEmitter Turnâon Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
V
0.850
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
110
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo
230
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
14
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%.
TYPICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Note 2
Note 1
20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
www.onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese