NSS12501UW3T2G Datasheet, PDF (3/5 Pages) ON Semiconductor – 12 V, 7.0 A, Low VCE(sat) NPN Transistor

NSS12501UW3T2G
0.15
I_C/I_B = 10
0.10
V_CE(sat) = 150°C
25°C
0.2
I_C/I_B = 100
0.15
150°C
-55 °C
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.1
0.05
V_CE(sat) = -55°C
25°C
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
625
575
525
475
425
375
325
275
225
175
125
0.001
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
-55 °C (5 V)
-55 °C (2 V)
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
1.2
1.1 ^IC^/IB ^{= 10}
1.0
0.9
-55 °C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
10
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
V_CE = 2.0 V
0.9
0.8
-55 °C
1.0
10 mA 100 mA 300 mA
0.8
I_C = 500 mA
0.7
25°C
0.6
0.6
0.5
0.4
0.4
0.3
0.2
0.001
150°C
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
0.2
0
10
0.01
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
Figure 6. Saturation Region
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