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| NSS12501UW3T2G Datasheet, PDF (2/5 Pages) ON Semiconductor – 12 V, 7.0 A, Low VCE(sat) NPN Transistor | |||
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NSS12501UW3T2G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorÄ-ÄEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
12
CollectorÄ-ÄBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
EmitterÄ-ÄBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)CBO
12
V(BR)EBO
6.0
Collector Cutoff Current
(VCB = 12 Vdc, IE = 0)
ICBO
-
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
-
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
hFE
200
200
200
200
200
CollectorÄ-ÄEmitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(IC = 3.0 A, IB = 0.030 A)
(IC = 4.0 A, IB = 0.400 A)
BaseÄ-ÄEmitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.01 A)
VCE(sat)
-
-
-
-
-
-
VBE(sat)
-
BaseÄ-ÄEmitter Turn-on Voltage (Note 3)
(IC = 2.0 A, VCE = 2.0 V)
VBE(on)
-
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
150
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
-
Cobo
-
Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%.
td
-
tr
-
ts
-
tf
-
Typical
Max
-
-
-
-
-
-
-
0.1
-
0.1
-
-
345
330
315
0.007
0.031
0.045
0.070
0.100
0.100
0.760
0.730
-
-
-
-
-
-
-
-
-
-
0.008
0.035
0.060
0.100
0.120
0.120
0.900
0.900
-
650
120
90
100
320
100
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
pF
pF
ns
ns
ns
ns
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