NSS12201LT1G_16 Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Transistor

NSS12201LT1G
0.2
0.15
I_C/I_B = 10
0.1
0.05
TYPICAL CHARACTERISTICS
150°C
25°C
0.25
0.2
I_C/I_B = 100
0.15
−55°C
0.1
0.05
−55°C
150°C
25°C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
575
525
150°C (5.0 V)
150°C (2.0 V)
475
425
375
25°C (5.0 V)
325
25°C (2.0 V)
275
225
−55°C (5.0 V)
175
−55°C (2.0 V)
125
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
0.9 V_CE = 2.0 V
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
I_C/I_B = 10
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
10 mA
I_C = 500 mA
0.8
100 mA
0.6
300 mA
0.4
0.2
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 6. Saturation Region
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