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NSS12201LT1G_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Transistor
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NSS12201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 12 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
V(BR)CEO
12
−
Vdc
−
V(BR)CBO
12
−
Vdc
−
V(BR)EBO
6.0
−
Vdc
−
ICBO
−
mAdc
−
0.1
IEBO
−
mAdc
−
0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.2 A)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
200
200
200
200
VCE(sat)
−
−
−
−
VBE(sat)
−
VBE(on)
−
fT
150
Cibo
−
Cobo
−
−
330
−
−
0.003
0.035
0.053
0.068
0.760
0.750
−
−
−
−
−
−
−
0.008
0.050
0.080
0.090
0.900
0.900
−
450
75
V
V
V
MHz
pF
pF
Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
100
ns
Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
350
ns
Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
110
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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