NSR20F20 Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR20F20
10
T_J = 125°C
1
100,000
10,000
1,000
150°C
125°C
0.1 ^{TJ = 150°C}
100
75°C
10
1
25°C
75°C
0.01
0.1
25°C
−25°C
0.01
−25°C
0.001
0.001
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
0
4
8
12
16
20
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
V_R, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
500
T_A = 25°C
400
300
200
100
0
0
4
8
12
16
20
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
820 W
+10 V
2.0 k
100 mH ^IF
0.1 mF
0.1 mF
t_r
t_p
t
I_F
10%
t_rr
t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
V_R
OSCILLOSCOPE
90%
INPUT SIGNAL
i_R(REC) = 1.0 mA
I_R
OUTPUT PULSE
(I_F = I_R = 10 mA; MEASURED
at i_R(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I_F) of 10 mA.
Notes: 2. Input pulse is adjusted so I_R(peak) is equal to 10 mA.
Notes: 3. t_p » t_rr
Figure 4. Recovery Time Equivalent Test Circuit
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