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| NSR20F20 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR20F20
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
213
PD
586
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
80
1.56
Storage Temperature Range
Tstg
â40 to +125
Junction Temperature
TJ
+150
1. Mounted onto a 4 in square FRâ4 board 50 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
IR
(VR = 10 V)
(VR = 20 V)
Forward Voltage
VF
(IF = 1.0 A)
(IF = 2.0 A)
Reverse Recovery Time
trr
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 4)
Typ
0.390
0.450
80
Max
Unit
mA
30
150
V
0.420
0.470
ns
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