NSR0340HT1G_14 Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0340HT1G
TYPICAL CHARACTERISTICS
1000
100
125°C
10 _150°C
1
0.1
85°C _25°C
−40°C
0.01
0
30
25
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (V)
Figure 2. Forward Voltage
T_A = 25°C
10000
1000 150°C
100 _125°C
10
85°C
1
0.1 _25°C
0.01
0.001
−40°C
0.0001
0.00001
0.6
0
5 10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
100
Based on square wave currents
T_J = 25°C prior to surge
20
15
10
10
5
0
0
5
10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
1
0.01
0.1
1
10
t_P, SQUARE WAVE PULSE DURATION (ms)
Figure 5. Non−Repetitive Surge Current
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