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| NSR0340HT1G_14 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR0340HT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
740
PD
160
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
460
PD
270
Junction and Storage Temperature Range
TJ, Tstg
â55 to +150
1. Mounted onto a 4 in square FRâ4 board 10 mm sq. 1 oz. Cu 0.06â thick singleâsided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick singleâsided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
mA
0.2
1.0
0.4
3.0
1.3
6.0
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
mV
320
350
415
490
470
590
Total Capacitance
(VR = 10 V, f = 1 MHz)
CT
pF
6.0
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
ns
5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
â Source +
0.1 mF
tr
tp
0V
10%
750 mH
IF
50 W Output
Pulse
Generator
0.1 mF
Adjust for IRM
DUT
VR
90%
Pulse Generator
Output
IF
trr
RL = 50 W
50 W Input
Oscilloscope
Current
Transformer
iR(REC) = 1 mA
IRM
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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