NSR02F30NXT5G_10 Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR02F30NXT5G
TYPICAL CHARACTERISTICS
1000
100
10
150°C
1
0.1
0.01
0.001
0
125°C
75°C
25°C
−25°C
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
0.6
0
150°C
125°C
75°C
25°C
−25°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
20
18
T_A = 25°C
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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3