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| NSR02F30NXT5G_10 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR02F30NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
400
PD
312
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
170
PD
735
Storage Temperature Range
Tstg
â40 to +125
Junction Temperature
TJ
+125
1. Mounted onto a 4 in square FRâ4 board 10 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
mA
7.0
50
Forward Voltage
(IF = 10 mA)
(IF = 200 mA)
VF
V
0.37
0.55
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT
7.0
pF
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