 English |
|
|
|
|
|
|
|
| NSM11156DW6T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Dual PNP Transistors | |||
| |||
| ◁ |
NSM11156DW6T1G
ELECTRICAL CHARACTERISTICS - Q2 (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorÄ-ÄEmitter Breakdown Voltage
(IC = -10 mA)
V(BR)CEO
-65
CollectorÄ-ÄEmitter Breakdown Voltage
(IC = -10 mA, VEB = 0)
CollectorÄ-ÄBase Breakdown Voltage
(IC = -10 mA)
EmitterÄ-ÄBase Breakdown Voltage
(IE = -1.0 mA)
Collector Cutoff Current (VCB = -30 V)
Collector Cutoff Current (VCB = -30 V, TA = 150°C)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
-80
-80
-5.0
-
-
ON CHARACTERISTICS
DC Current Gain
(IC = -10 mA, VCE = -5.0 V)
(IC = -2.0 mA, VCE = -5.0 V)
CollectorÄ-ÄEmitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
BaseÄ-ÄEmitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
BaseÄ-ÄEmitter On Voltage
(IC = -2.0 mA, VCE = -5.0 V)
(IC = -10 mA, VCE = -5.0 V)
hFE
VCE(sat)
VBE(sat)
VBE(on)
-
220
-
-
-
-
-0.6
-
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
-
-
V
-
-15
nA
-
-4.0
mA
-
150
-
290
475
V
-
-0.3
-
-0.65
V
-0.7
-
-0.9
-
V
-
-0.75
-
-0.82
300
250
200
150
100
50
RqJA = 833°C/W
0
-Ä50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese