NSM11156DW6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual PNP Transistors

NSM11156DW6T1G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation,
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad of 1.45 mm², 1 oz Cu.
Symbol
P_D
R_qJA
Symbol
P_D
R_qJA
T_J, T_stg
Max
180 (Note 1)
1.44 (Note 1)
692 (Note 1)
Max
230
1.83
544
-ā55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS - Q1 (PNP BRT) (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector‐Base Cutoff Current
(V_CB = -50 V, I_E = 0)
Collector‐Emitter Cutoff Current
(V_CE = -50 V, I_B = 0)
Emitter‐Base Cutoff Current
(V_EB = -6.0 V, I_C = 0)
Collector‐Base Breakdown Voltage
(I_C = -10 mA, I_E = 0)
Collector‐Emitter Breakdown Voltage (Note 2)
(I_C = -2.0 mA, I_B = 0)
I_CBO
-
I_CEO
-
I_EBO
-
V_(BR)CBO
-50
V_(BR)CEO
-50
ON CHARACTERISTICS (Note 2)
DC Current Gain
(V_CE = -10 V, I_C = -5.0 mA)
Collector‐Emitter Saturation Voltage
(I_C = -10 mA, I_B = -0.3 mA)
Output Voltage (on)
(V_CC = -5.0 V, V_B = -2.5 V, R_L = 1.0 kW)
Output Voltage (off)
(V_CC = -5.0 V, V_B = -0.5 V, R_L = 1.0 kW)
Input Resistor
h_FE
V_CE(sat)
V_OL
V_OH
R1
35
-
-
-4.9
7.0
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
0.8
Typ
Max
Unit
-
-100
nAdc
-
-500
nAdc
-
-0.5
mAdc
-
-
Vdc
-
-
Vdc
60
-
-
-0.25
Vdc
-
-0.2
Vdc
-
-
Vdc
10
13
kW
1.0
1.2
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