NSD350H Datasheet, PDF (3/4 Pages) ON Semiconductor – High Voltage Switching Diode

NSD350H
TYPICAL CHARACTERISTICS
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
0
150°C
125°C
85°C
25°C
−55°C
150°C
100
125°C
10
50 100 150 200 250 300 350
V_R, REVERSE VOLTAGE (V)
Figure 2. Reverse Leakage Current
1
0.2 0.3
85°C 25°C −55°C
0.4 0.5 0.6 0.7 0.8 0.9
V_F, FORWARD VOLTAGE (V)
Figure 3. Forward Voltage
1.0 1.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
T_J = 25°C
f = 1 MHz
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3