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| NSD350H Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Switching Diode | |||
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NSD350H
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
V(BR)R
350
V
Reverse Leakage (VR = 300 V)
IR
150
nA
Reverse Leakage (VR = 350 V)
IR
5
mA
Forward Voltage (IF = 100 mA)
VF
1.1
V
Total Capacitance (VR = 0 V, f = 1.0 MHz)
CT
5.0
pF
Reverse Recovery Time (IF = IR = 10 mA, IR(rec) = 1.0 mA, Figure 1)
trr
55
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
T
IF
10%
trr
T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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