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NSBC114EF3T5G Datasheet, PDF (3/7 Pages) ON Semiconductor – Digital Transistors (BRT)
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NSBC114EF3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EF3T5G
IEBO
−
NSBC124EF3T5G
−
NSBC144EF3T5G
−
NSBC114YF3T5G
−
NSBC114TF3T5G
−
NSBC123TF3T5G
−
NSBC115TF3T5G
−
NSBC143EF3T5G
−
NSBC143ZF3T5G
−
NSBC123JF3T5G
−
NSBC144WF3T5G
−
−
100
nAdc
−
500
nAdc
−
0.5
mAdc
−
0.2
−
0.1
−
0.2
−
0.9
−
4.0
−
0.1
−
1.5
−
0.18
−
0.2
0.13
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 3)
V(BR)CBO
50
−
V(BR)CEO
50
−
−
Vdc
−
Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EF3T5G
hFE
35
60
−
NSBC124EF3T5G
60
100
−
NSBC144EF3T5G
80
140
−
NSBC114YF3T5G
80
140
−
NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G
160
350
−
NSBC143EF3T5G
15
30
−
NSBC143ZF3T5G
80
200
−
NSBC123JF3T5G
80
140
−
NSBC144WF3T5G
80
140
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
NSBC114EF3T5G/NSBC124EF3T5G/NSBC144EF3T5G
NSBC114YF3T5G/NSBC144WF3T5G/NSBC123JF3T5G
(IC = 10 mA, IB = 1 mA)
NSBC143EF3T5G/NSBC143ZF3T5G/NSBC123TF3T5G/
NSBC114TF3T5G
(IC = 10 mA, IB = 5 mA)
NSBC115TF3T5G
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
NSBC114TF3T5G
−
NSBC114EF3T5G
−
NSBC124EF3T5G
−
NSBC114YF3T5G
−
NSBC123TF3T5G
−
NSBC143EF3T5G
−
NSBC143ZF3T5G
−
NSBC123JF3T5G
−
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
NSBC144EF3T5G
−
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
NSBC144WF3T5G
−
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW)
NSBC115TF3T5G
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
Vdc
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
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