NSBC114EF3T5G Datasheet, PDF (2/7 Pages) ON Semiconductor – Digital Transistors (BRT)

NSBC114EF3T5G Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
Total Device Dissipation
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance Junction-to-Ambient (Note 2)
Thermal Resistance Junction−to−Lead 3 (Note 1)
Junction and Storage Temperature
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
Symbol
P_D
R_qJA
P_D
R_qJA
R_qJL
T_J, T_stg
Max
254
2.0
493
297
2.4
421
193
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EF3T5G
Marking*
A (0°)
R1 (k)
10
R2 (k)
10
Package
Shipping^†
NSBC124EF3T5G
L (0°)
22
22
NSBC144EF3T5G
D (0°)
47
47
NSBC114YF3T5G
J (0°)
10
47
NSBC123TF3T5G
NSBC143EF3T5G
NSBC143ZF3T5G
T (0°)
P (0°)
R (0°)
2.2
∞
4.7
4.7
SOT−1123
(Pb−Free)
4.7
47
8000/Tape & Reel
NSBC123JF3T5G
V (0°)
2.2
47
NSBC144WF3T5G
Q (0°)
47
22
NSBC114TF3T5G
K (90°)
10
∞
NSBC115TF3T5G
P (90°)
100
∞
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*(XX°) = Degree rotation in the clockwise direction.
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