NSB4904DW1T1G Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSB4904DW1T1G, NSB4904DW1T2G
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V_CB = 50 V, I_E = 0)
I_CBO
−
−
Collector-Emitter Cutoff Current (V_CE = 50 V, I_B = 0)
I_CEO
−
−
Emitter-Base Cutoff Current (V_EB = 6.0 V, I_C = 0)
I_EBO
−
−
Collector-Base Breakdown Voltage (I_C = 10 mA, I_E = 0)
V_(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 4) (I_C = 2.0 mA, I_B = 0)
V_(BR)CEO
50
−
ON CHARACTERISTICS (Note 4)
DC Current Gain (V_CE = 10 V, I_C = 5.0 mA)
Collector-Emitter Saturation Voltage (I_C = 10 mA, I_B = 0.3 mA)
Output Voltage (on) (V_CC = 5.0 V, V_B = 3.5 V, R_L = 1.0 kW)
Output Voltage (off) (V_CC = 5.0 V, V_B = 0.5 V, R_L = 1.0 kW)
Input Resistor
h_FE
80
140
V_CE(sat)
−
−
V_OL
−
−
V_OH
4.9
−
R1
32.9
47
Resistor Ratio
R1/R2
0.8
1.0
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Max
Unit
100
nA
500
nA
0.1
mA
−
V
−
V
−
0.25
V
0.2
V
−
V
61.1
kW
1.2
300
250
200
150
100
50
R_qJA = 490°C/W
0
− 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
ORDERING INFORMATION AND RESISTOR VALUES
Device
R1 (K)
R2 (K)
Package
Shipping^†
NSB4904DW1T1G
47
47
SOT−363
(Pb−Free)
3000/Tape & Reel
NSB4904DW1T2G
47
47
SOT−363
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
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