NSB4904DW1T1G Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSB4904DW1T1G, NSB4904DW1T2G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Thermal Resistance −
Junction-to-Lead
Junction and Storage Temperature
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
Symbol
P_D
R_qJA
Symbol
P_D
R_qJA
R_qJL
T_J, T_stg
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
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