NSB1011XV6T5 Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual Bias Resistor Transistors

1
I_C/I_B = 10
0.1
0.01
NSB1011XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — Q1
1000
T_A = −25°C
25°C
75°C
100
V_CE = 10 V
T_A = 75°C
25°C
−25°C
0.001 ₀
4
3
2
1
00
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) versus I_C
50
10 ₁
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
f = 1 MHz
I_E = 0 V
T_A = 25°C
100
75°C
10
25°C
T_A = −25°C
1
0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
V_O = 5 V
50
0.001
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
V_O = 0.2 V
1
T_A = −25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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