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NSB1011XV6T5 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Bias Resistor Transistors
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NSB1011XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Q1
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2)
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
hFE
VCE(sat)
VOL
VOH
R1
Resistor Ratio
R1/R2
Q2
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2)
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
hFE
VCE(sat)
VOL
VOH
R1
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
R1/R2
300
Min
−
−
−
50
50
35
−
−
4.9
7.0
0.8
−
−
−
50
50
80
−
−
4.9
1.54
0.038
Typ
−
−
−
−
−
60
−
−
−
10
1.0
−
−
−
−
−
140
−
−
−
2.2
0.047
250
200
150
100
50
RqJA = 833°C/W
0
− 50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Max
Unit
100
nAdc
500
nAdc
0.5
mAdc
−
Vdc
−
Vdc
−
−
0.25
Vdc
0.2
Vdc
−
Vdc
13
kW
1.2
−
100
nAdc
500
nAdc
0.2
mAdc
−
Vdc
−
Vdc
−
−
0.25
Vdc
0.2
Vdc
−
Vdc
2.86
kW
0.056
−
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