NS2029M3 Datasheet, PDF (3/5 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

NS2029M3
TYPICAL ELECTRICAL CHARACTERISTICS
1
I_C/I_B =
10
T_A = 25°C
0.1 _{TA = 150°C}
T_A = −55°C
0.01
0.1
1.0
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B =
1.1
10
1
0.9
T_A = −55°C
0.8
0.7
T_A = 25°C
0.6
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1.0
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
1000
100
T_A = 150°C
T_A = 25°C
T_A = −55°C
V_CE = 6 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
I_C =
100 mA
I_C = 50 mA
T_A =
25°C
I_C = 30 mA
I_C = 10 mA
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 4. Saturation Region
1
100
V_CE = 2 V
0.9
0.8
T_A = −55°C
0.7
T_A = 25°C
0.6
0.5
0.4
T_A = 150°C
C_ibo
10
C_obo
0.3
0.2
1
0.1
1.0
10
100
1000
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Turn−ON Voltage vs.
Collector Current
V_R, REVERSE VOLTAGE (V)
Figure 6. Capacitance
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