NS2029M3 Datasheet, PDF (2/5 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

NS2029M3
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (I_C = −50 mAdc, I_E = 0)
V_(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage (I_C = −1.0 mAdc, I_B = 0)
V_(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage (I_E = −50 mAdc, I_E = 0)
V_(BR)EBO
−6.0
−
−
Vdc
Collector−Base Cutoff Current (V_CB = −30 Vdc, I_E = 0)
I_CBO
−
−
−0.5
nA
Emitter−Base Cutoff Current (V_EB = −7.0 Vdc, I_B = 0)
I_EBO
−
−
−0.1
mA
Collector−Emitter Saturation Voltage (Note 2)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
V_CE(sat)
−
Vdc
−
−0.5
DC Current Gain (Note 2)
(V_CE = −6.0 Vdc, I_C = −1.0 mAdc)
h_FE
−
120
−
560
Transition Frequency
(V_CE = −12 Vdc, I_C = −2.0 mAdc, f = 30 MHz)
f_T
MHz
−
140
−
Output Capacitance (V_CB = −12 Vdc, I_E = 0 Adc, f = 1.0 MHz)
C_OB
−
3.5
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
www.onsemi.com
2