NRVTSM245E Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Trench Schottky Power Rectifier

NRVTSM245E
TYPICAL CHARACTERISTICS
100
100
T_A = 175°C
10
T_A = 150°C
T_A = 125°C
1
T_A = 90°C
T_A = 25°C
T_A = −55°C
0.1
0.1
0.3
0.5
0.7
0.9
1.1
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
T_A = 150°C
10
T_A = 125°C
T_A = 175°C
T_A = 90°C
1
T_A = 25°C
0.1
T_A = −55°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 90°C
T_A = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 90°C
T_A = 25°C
1.E−07
5
15
25
35
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−05
45
5
15
25
35
45
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
4
T_J = 25°C
3
2
DC
Square Wave
10
0.1
1
10
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
1
0
10
R_qJL = 6.3°C/W
30 50 70 90 110 130 150 170
T_C, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
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