NRVBS3200T3G Datasheet, PDF (3/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3200T3G, NRVBS3200T3G
1.0E−02
1.0E−03
1.0E−04
T_A = 175°C
T_A = 150°C
1.0E−05 ^TA ^{= 100°C}
1.0E−02
1.0E−03
1.0E−04
1.0E−05
T_A = 175°C
T_A = 150°C
T_A = 100°C
1.0E−06
1.0E−07
1.0E−06
1.0E−07 ^TA ^{= 25°C}
1.0E−08 ^TA ^{= 25°C}
1.0E−08
1.0E−09
0
1.0E−09
20 40 60 80 100 120 140 160 180 200
0
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
1000
Typical Capacitance
at 0 V = 209 V
100
T_C = 25°C
f = 1 MHz
10
0 20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
7
R_qJL = 13°C/W
6
dc
5
SQUARE WAVE
4
3
2
1
0
80 90 100 110 120 130 140 150 160 170 180
T_L, LEAD TEMPERATURE (°C)
Figure 6. Current Derating − Lead
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
SQUARE WAVE
dc
1
2
3
4
5
6
I_O, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
http://onsemi.com
3