NRVBS3200T3G Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3200T3G, NRVBS3200T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
200
V
V_RWM
V_R
Average Rectified Forward Current (T_L = 120 °C)
I_F(AV)
3.0
A
Non−Repetitive Peak Surge Current
I_FSM
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
100
Operating Junction Temperature
T_J
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(I_F = 3.0 A, T_J = 25°C)
(I_F = 4.0 A, T_J = 25°C)
(I_F = 3.0 A, T_J = 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 150°C)
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
R_qJL
R_qJA
V_F
I_R
Value
13
62
0.84
0.86
0.59
1.0
5.0
Unit
°C/W
V
mA
mA
100
100
T_A = 150°C
T_A = 100°C
10
T_A = 175°C
T_A = 25°C
10
T_A = 150°C
T_A = 175°C
T_A = 100°C
T_A = 25°C
1
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_F, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_F, FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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