NRVBA1H100T3G Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRA1H100T3G, NRVBA1H100T3G
TYPICAL CHARACTERISTICS
100
100
150C 125C 25C
150C 125C 25C
10
10
1
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
10
1
150C
10
1
150C
0.1
0.01
0.001
125C
0.1
0.01
0.001
125C
25C
0.0001
25C
0.0001
0.00001
0
0.00001
10 20 30 40 50 60 70 80 90 100
0
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
10 20 30 40 50 60 70 80 90 100
V_R, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
2.0
dc
1.5
Square Wave
1.0
0.5
R_qJL = 14C/W
1.0
T_J = 175C
0.8
0.6
0.4
0.2
Square Wave
dc
0
135 140 145 150 155 160 165 170 175
T_L, LEAD TEMPERATURE (C)
Figure 5. Current Derating
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
I_O, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
http://onsemi.com
3