NRVBA1H100T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRA1H100T3G, NRVBA1H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_L = 167C)
V_RRM
100
V
V_RWM
V_R
I_O
A
1.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_FSM
A
50
Storage and Operating Junction Temperature Range (Note 1)
T_stg, T_J
−65 to +175
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
2. Mounted with 700 mm² copper pad size (Approximately 1 in²) 1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm² copper, 1 oz FR4 Board.
Symbol
Y_JCL
R_qJA
R_qJA
Value
14
75
280
Unit
C/W
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I_F = 1.0 A, T_J = 25C)
(I_F = 2.0 A, T_J = 25C)
(I_F = 1.0 A, T_J = 125C)
(I_F = 2.0 A, T_J = 125C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T_J = 25C)
(Rated dc Voltage, T_J = 125C)
4. Pulse Test: Pulse Width  380 ms, Duty Cycle  2.0%.
Symbol
Value
Unit
V_F
V
0.76
0.84
0.61
0.68
I_R
40
mA
0.5
mA
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