NPN2N3773 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon Power Transistors

NPN 2N3773*, PNP 2N6609
300
200 ^150°C
NPN
100
70
25°C
50
−55 °C
30
V_CE = 4 V
20
10
7.0
5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
PNP
300
200
150°C
25°C
100
−55 °C
70
50
30
V_CE = 4 V
20
10
7.0
5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain
2.0
1.6
I_C = 4 A
1.2
I_C = 8 A
0.8
I_C = 16 A
0.4
T_C = 25°C
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_B, BASE CURRENT (AMPS)
2.0 3.0
Figure 3. Collector Saturation Region
2.0
1.6 ^{IC = 4 A}
1.2
I_C = 8 A
0.8
I_C = 16 A
0.4
T_C = 25°C
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_B, BASE CURRENT (AMPS)
2.0 3.0 5.0
Figure 4. Collector Saturation Region
2.0
I_C/I_B = 10
1.6
1.2
V_BE(sat)
0.8
25°C
0.4
150°C
150°C
V_CE(sat)
25°C
0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage
2.0
I_C/I_B = 10
1.6
1.2 _VBE(sat)
0.8 25°C
150°C
0.4
150°C
25°C
V_CE(sat)
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. “On” Voltage
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