NDF02N60ZH Datasheet, PDF (3/10 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 4.8 

NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
4.0
4.0
3.5
7.0 V
3.5
V_DS = 25 V
3.0
3.0
2.5
V_GS = 10 V
6.5 V
2.5
2.0
2.0
6.0 V
1.5
1.5
1.0
1.0
T_J = 25°C
5.5 V
T_J = 150°C
0.5
0.5
T_J = −55°C
5.0 V
0.0
0.0
0.0
5.0
10.0
15.0
20.0
25.0
3
4
5
6
7
8
9
10
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6.00
5.75
5.50
I_D = 1 A
T_J = 25°C
5.25
5.00
4.75
4.50
4.25
4.00
3.75
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate−to−Source
Voltage
5.25
5.00
V_GS = 10 V
T_J = 25°C
4.75
4.50
4.25
4.00
3.75
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.50
2.25
2.00
I_D = 1 A
V_GS = 10 V
1.15
I_D = 1 mA
1.10
1.75
1.05
1.50
1.25
1.00
1.00
0.75
0.95
0.50
0.25
−50 −25 0
0.90
25 50 75 100 125 150
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BV_DSS Variation with Temperature
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