NDF02N60ZH Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 4.8 

NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF
NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
(Note 1)
V_DSS
I_D
600
V
2.4
2.2
A
Continuous Drain Current R_qJC
I_D
T_A = 100°C (Note 1)
Pulsed Drain Current, V_GS @ 10 V
I_DM
Power Dissipation R_qJC
P_D
Gate−to−Source Voltage
V_GS
Single Pulse Avalanche Energy,
E_AS
I_D = 2.4 A
ESD (HBM)
V_esd
(JESD 22−A114)
1.6
1.4
A
10
9
A
24
57
W
±30
V
120
mJ
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
V_ISO
4500
dv/dt
4.5
V
V/ns
Continuous Source Current (Body
I_S
Diode)
2.4
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 2.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
600 V
R_DS(on) (MAX) @ 1 A
4.8 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF02N60ZG
TO−220FP
CASE 221D
4
1
2
3
NDD02N60Z−1G
IPAK
CASE 369D
1
2
3
NDF02N60ZH
TO−220FP
CASE 221AH
4
12
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
July, 2013 − Rev. 7
Publication Order Number:
NDF02N60Z/D