 English |
|
|
|
|
|
|
|
| N25S818HA_12 Datasheet, PDF (3/12 Pages) ON Semiconductor – 256 kb Low Power Serial SRAMs | |||
| |||
| ◁ |
N25S818HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
â0.3 to VCC + 0.3
V
Voltage on VCC Supply Relative to VSS
VCC
â0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
â40 to 125
°C
Operating Temperature
TA
â40 to +85
°C
Soldering Temperature and Time
TSOLDER
260°C, 10 sec
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Typ
Min
(Note 1)
Max
Unit
Supply Voltage
VCC
1.8 V Device
1.7
1.95
V
Input High Voltage
VIH
0.7 x VCC
VCC + 0.3
V
Input Low Voltage
VIL
â0.3
0.8
V
Output High Voltage
VOH
IOH = â0.4 mA
VCC â 0.5
V
Output Low Voltage
VOL
IOL = 1 mA
0.2
V
Input Leakage Current
ILI
CS = VCC, VIN = 0 to VCC
0.5
mA
Output Leakage Current
ILO
CS = VCC, VOUT = 0 to VCC
0.5
mA
Read/Write Operating Current
ICC1
F = 1 MHz, IOUT = 0
3
mA
ICC2
F = 10 MHz, IOUT = 0
6
mA
ICC3
F = fCLK MAX, IOUT = 0
10
mA
Standby Current
ISB
CS = VCC, VIN = VSS or VCC
1. Typical values are measured at Vcc = Vcc Typ., TA = 25°C and are not 100% tested.
200
500
nA
Table 5. CAPACITANCE (Note 2)
Item
Symbol
Test Condition
Input Capacitance
CIN
VIN = 0 V, f = 1 MHz, TA = 25°C
I/O Capacitance
CI/O
VIN = 0 V, f = 1 MHz, TA = 25°C
2. These parameters are verified in device characterization and are not 100% tested
Min
Max
Unit
7
pF
7
pF
http://onsemi.com
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese