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| MUN5236DW1 Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors | |||
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MUN5236DW1, NSBC115EDXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
â
nAdc
â
100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
â
nAdc
â
500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
â
mAdc
â
0.05
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
â
Vdc
â
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
â
Vdc
â
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
150
â
Collector-Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
â
V
â
0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
â
Vdc
1.2
0.5
Input Voltage (On)
(VCE = 0.3 V, IC = 1.0 mA)
Vi(on)
Vdc
3.0
1.7
â
Output Voltage (On)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
VOL
â
Vdc
â
0.2
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
â
Vdc
â
Input Resistor
R1
70
100
130
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ⤠2%.
400
350
300
250
200
(1) (2)
150
(1) SOTâ363; 1.0 Ã 1.0 Inch Pad
(2) SOTâ563; Minimum Pad
100
50
0
â50 â25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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