MUN5236DW1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors

MUN5236DW1, NSBC115EDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5236DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
MUN5236DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R_qJL
Junction and Storage Temperature Range
NSBC115EDXV6 (SOT−563) ONE JUNCTION HEATED
T_J, T_stg
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
NSBC115EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
Junction and Storage Temperature Range
T_J, T_stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
357
2.9
350
500
4.0
250
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
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