MTP40N10E Datasheet, PDF (3/7 Pages) Motorola, Inc – TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM

MTP40N10E
TYPICAL ELECTRICAL CHARACTERISTICS
80
V_GS = 10 V
8V
70
9V
60
T_J = 25°C
7V
50
40
6V
30
20
5V
10
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
80
70
V_DS ≥ 10 V
60
100°C
25°C
50
T_J = −55°C
40
30
20
10
0
2
3
4
5
6
7
8
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.07
V_GS = 10 V
0.06
0.05
T_J = 100°C
0.04
25°C
0.03
−55°C
0.02
0.01
0
0 10 20 30 40 50 60 70 80
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.050
0.045 ^TJ ^{= 25°C}
0.040
0.035
V_GS = 10 V
0.030
15 V
0.025
0.020
0.015
0.010
0 10 20 30 40 50 60 70 80
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
1.8
V_GS = 10 V
1.6
I_D = 20 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
V_GS = 0 V
100
10
T_J = 125°C
100°C
1.0
0 10 20 30 40 50 60 70 80 90 100
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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