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MTP40N10E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
MTP40N10E
Preferred Device
Power MOSFET
40 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
100
100
± 20
± 40
40
29
140
169
1.35
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
150
Single Pulse Drain−to−Source Avalanche
EAS
800
Energy − Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc, Peak
IL = 40 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction to Case
− Junction to Ambient
RθJC
RθJA
0.74
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
40 AMPERES
100 VOLTS
RDS(on) = 40 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP40N10E
LLYWW
1
Gate
3
Source
2
Drain
MTP40N10E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP40N10E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MTP40N10E/D